Description
The goal of this project is to design and optimize the performance of two-dimensional (2D) semiconductors including transition metal dichalcogenides (TMDs such as MoS2) and phosphorene by focusing on two important aspects: contact engineering and interface optimization. Based on encouraging results from our group, we plan to achieve this goal by using (i) graphene as electrode material, (ii) hexagonal boron nitride (h-BN) passivating layers, (iii) reducing the Schottky barriers at the contacts by highly doping and patterning the graphene contacts, and (iv) by systematically studying the transport properties of charge carriers confined near the interface of 2D semiconductors with various substrate materials.